A new phenomenon of hydrogen-accelerated formation of nanoclusters in silicon consisting of vacancies, interstitial atoms and impurity atoms has been discovered and studied . The use of this effect opens up a new direction of self-organized synthesis of nanostructures.

A series of defect-impurity centers in silicon have been discovered, which, according to the world classification, have received the name Almaty 1,……19. It should be noted that in terms of the number of discovered EPR centers, this is approximately 10% of the total number and is the third indicator in the world after the laboratories of Professor George Watkins (Albany, USA) and Professor Ammerlaan (Amsterdam, Netherlands), leaving far behind (four EPR centers each) world-famous scientific centers such as the A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences (St. Petersburg) and the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences (Novosibirsk). 

A unique high-current accelerator of ultra-low energy ions has been developed, the authors of which hold patents in the USA. Using this accelerator, the physical principles of silicon doping by low-energy ion implantation with atomic and molecular beams, ion-plasma technology for manufacturing devices and synthesis of coatings with valuable properties for practical use have been developed. A know-how technology for manufacturing semiconductor radiation detectors with parameters that are record-breaking to date has been developed. These detectors have worked without degradation of parameters for more than twenty thousand hours on board aircraft in outer space. 

An isolated self-interstitial atom and a number of radiation defects in silicon, including those with properties of bi- and metastability, have been discovered and identified (Advances in Physical Sciences, 2000, pp. 143-155).

A technology has been developed for producing semiconductor silicon and gaseous monosilane (SiH4 molecule) by processing silicate slags (Preliminary patents of the Republic of Kazakhstan No. 17865 and No. 17866. Patent No. 17865 also received a positive decision from the International Patent Agency). 

The physical principles of silicon doping by the method of low-energy ion implantation with atomic and molecular beams, ion-plasma technology for the manufacture of devices and the synthesis of coatings with properties valuable for practical use have been developed (J. Rad. Eff. and DEf. In Solids, 1990. V.114, pp. 3-14).